Thermal Oxide Wafer
Silicon wafers with a dense, uniform SiO₂ layer grown by wet or dry oxidation, from tens of nanometres to several microns.
Thermally grown oxide gives a cleaner, denser insulator than deposited films. Oxide can be grown on wafers we supply, or on your own substrates through our partner fabs.
Specifications
| Parameter | Value |
|---|---|
| Diameter | 2" – 12" |
| Oxide thickness | 20 nm – 10 µm |
| Oxidation | Wet / dry |
| Thickness uniformity | typically within ±5% |
| Oxide sides | Single or both sides |
Applications
- Insulating layer for MEMS and microfluidic chips
- Gate and field oxide studies
- Graphene and 2D-material transfer substrates