SOI Wafer
Silicon-on-insulator wafers with selectable device layer, buried oxide and handle thickness.
Specify each layer of the stack separately: dopant, resistivity and orientation of the device and handle layers, plus BOX thickness. We review the stack with you before production.
Specifications
| Parameter | Value |
|---|---|
| Diameter | 4" / 6" / 8" |
| Device layer | 0.2 – 200 µm |
| Buried oxide (BOX) | 0.1 – 5 µm |
| Handle wafer | 300 – 1000 µm |
| Process | Bonded / thinned |
Applications
- MEMS accelerometers, gyroscopes and pressure sensors
- Silicon photonics
- High-voltage and radiation-tolerant devices